III-V compound semiconductor epitaxial wafer
2022-12-22
The company adopts advanced molecular beam epitaxy (MBE) equipment to provide high-quality and high-performance III-V compound semiconductor thin film materials such as InP, GaAs, InAs, GaSB, InSB and so on for domestic and foreign markets.
GaAs-based, InP-based, InAs-based, GaSb-based and
InSb-based epitaxial wafer
Dimensions of epitaxial wafer: 2 inches, 3 inches, 4 inches, 6 inches and 8 inches.
