High Purity Silicon Si Target
                
                    2022-11-09
                
                - Sputtering target process flow:
 Raw powder → powder smelting → powder mixing → press molding → atmosphere sintering → plastic processing → heat treatment → ultrasonic flaw detection → water cutting → mechanical processing → metallization → binding → ultrasonic testing → ultrasonic cleaning → final inspection → packaging and delivery.
 Component quality control
 Composition analysis of raw materials:
 Through the detection and analysis of ICP, GDMS and other equipment, the content of metal impurities is ensured to meet the standard of purity;
 The content of nonmetallic impurities is detected by carbon-sulfur analyzer, nitrogen-oxygen analyzer and other equipment.
 Metallographic inspection analysis:
 The target material is detected by flaw detection equipment to ensure that there are no defects and shrinkage cavities in the product;
 Through metallographic test, the degree of grain inside the target is detected to ensure that the grain is fine.
 Appearance size detection:
 Measure the product size by micrometer and precision caliper to ensure that it meets the requirements of customer drawings;
 The surface smoothness and cleanliness of products are measured by surface cleanliness measuring instrument.
 Packaging and storage instructions
 Out-of-warehouse packaging: internal vacuum bag vacuum packaging, external labeling (packaging according to demand), carton foam pad express transportation.
 Storage method: store in a dry environment, avoid moisture, seal and package, handle with care, and prevent pressure and collision.
 Caution: Please wear dust-proof gloves to operate before use, and observe whether the target surface is clean, so as to avoid direct hand contact operation and other foreign objects polluting the target.
| Element introduction | Elemental properties | ||
| Chinese name | silicon (Si) | dilatation coefficient | (25℃)2.6μm·m-1·K-1 | 
| symbol of element | Si | thermal conductivity | 149W·m-1·K-1 | 
| CAS number | 7440-21-3 | electrical resistivity | (20℃)103nΩ·m | 
| state of matter | solid | Young's modulus | 130-188 GPa | 
| density | 2.33g·cm3 | shear modulus | 51-80 GPa | 
| melting point | 1414℃ | bulk modulus | 97.6 GPa | 
| boiling point | 3265℃ | Mohs hardness | seven | 
| melting heat | 50.21 kJ·mol-1 | Poisson's ratio | 0.064-0.28[6] | 
| heat of vapourization | 359 kJ·mol-1 | Magnetic sequence | Antimagnetism | 
| specific heat capacity | 19.789 J·mol-1·K-1 | crystalline structure | diamond | 
Applicable equipment and application fields
Applicable equipment: coating materials used in PVD technology, various single target systems, multi-target sputtering systems, ion sputtering systems and other magnetron sputtering equipment.
Application fields: scientific experimental research applications, nano-machining, device manufacturing and other related products, widely used in flat panel display, semiconductors, solar cells, optical components, energy-saving glass and other fields.
Applicable equipment: coating materials used in PVD technology, various single target systems, multi-target sputtering systems, ion sputtering systems and other magnetron sputtering equipment.
Application fields: scientific experimental research applications, nano-machining, device manufacturing and other related products, widely used in flat panel display, semiconductors, solar cells, optical components, energy-saving glass and other fields.
 
             
                     
                    